document number: 94428 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-may-10 1 "half-bridge" igbt int-a-pak (ultrafast speed igbt), 100 a GA100TS120UPBF vishay high power products features ? generation 4 igbt technology ? ultrafast: optimized fo r high speed 8 khz to 40 khz in hard switching, > 200 khz in resonant mode ? very low conduction and switching losses ? hexfred? antiparallel diod es with ultrasoft recovery ? industry standard package ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level benefits ? increased operating efficiency ? direct mounting to heatsink ? performance optimized for power conversion: ups, smps, welding ? lower emi, requires less snubbing product summary v ces 1200 v i c dc 182 a v ce(on) at 100 a, 25 c 2.25 v int-a-pak absolute maximum ratings parameter symbol test conditions max. units collector to em itter voltage v ces 1200 v continuous coll ector current i c t c = 25 c 182 a t c = 93 c 100 pulsed collector current i cm repetitive rating; v ge = 20 v, pulse width limited by maximum ju nction temperature 200 peak switching current see fig. 17 i lm 200 peak diode forward current i fm 200 gate to emitter voltage v ge 20 v rms isolation voltage v isol any terminal to case, t = 1 minute 2500 maximum power dissipation p d t c = 25 c 520 w t c = 85 c 270 operating junction temperature range t j - 40 to + 150 c storage temperature range t stg - 40 to + 125 www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94428 2 revision: 04-may-10 GA100TS120UPBF vishay high power products "half-bridge" igbt int-a-pak (ultrafast speed igbt), 100 a note (1) repetitive rating; v ge = 20 v, pulse width limited by maximum junction temperature electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units collector to emitte r breakdown voltage v (br)ces v ge = 0 v, i c = 1 ma 1200 - - v collector to em itter voltage v ce(on) v ge = 15 v, i c = 100 a - 2.25 3 v ge = 15 v, i c = 100 a, t j = 125 c - 2 2.4 gate threshold voltage v ge(th) i c = 1.25 ma 3.0 4.4 6.0 temperature coefficient of threshold voltage v ge(th) / t j v ce = v ge , i c = 1.25 ma - - 12 - mv/c forward transconductance g fe v ce = 25 v, i c = 100 a pulse width 50 s, single shot - 136 - s collector to emitte r leaking current i ces v ge = 0 v, v ce = 1200 v - 0.03 1.0 ma v ge = 0 v, v ce = 1200 v, t j = 125 c - 4.2 10 maximum diode forward voltage v fm v ge = 0 v, i f = 100 a - 3.3 4.0 v v ge = 0 v, i f = 100 a, t j = 125 c - 3.2 3.8 gate to emitter leakage current i ges v ge = 20 v - - 250 na switching characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditio ns min. typ. max. units total gate charge (turn-on) q g v cc = 400 v i c = 124 a - 830 1245 nc gate to emitter charge (turn-on) q ge - 140 210 gate to collector charge (turn-on) q gc - 275 412 turn-on delay time t d(on) r g1 = 15 r g2 = 0 i c = 100 a v cc = 720 v v ge = 15 v t j = 25 c -570- ns rise time t r -85- turn-off delay time t d(off) -581- fall time t f -276- turn-on switching energy e on -7.6- mj turn-off switching energy e off (1) -6.8- total switching energy e ts (1) - 14.4 - turn-on delay time t d(on) r g1 = 15 r g2 = 0 i c = 100 a v cc = 720 v v ge = 15 v t j = 125 c -571- ns rise time t r -89- turn-off delay time t d(off) -606- fall time t f -649- turn-on switching energy e on -10- mj turn-off switching energy e off (1) -16- total switching energy e ts (1) -2645 input capacitance c ies v ge = 0 v v cc = 30 v f = 1 mhz - 18 672 - pf output capacitance c oes -830- reverse transfer capacitance c res -161- diode reverse recovery time t rr i c = 100 a r g1 = 15 r g2 = 0 v cc = 720 v di/dt = 1300 a/s -149- ns diode peak reverse current i rr -104- a diode recovery charge q rr -7664- c diode peak rate of fall of recovery during t b di (rec)m /dt - 1916 - a/s www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 94428 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-may-10 3 GA100TS120UPBF "half-bridge" igbt int-a-pak (ultrafast speed igbt), 100 a vishay high power products fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics thermal and mechanical specifications parameter symbol test conditions typ. max. units thermal resistance, junction to case igbt r thjc -0.24 c/w diode - 0.35 thermal resistance, case to sink per module r thcs 0.1 - mounting torque case to heatsink - 4.0 nm case to terminal 1, 2 and 3 for screws m5 x 0.8 - 3.0 weight of module 200 - g 0.1 1 10 100 0 25 50 75 100 f - frequency (khz) load current (a) duty cycle: 50 % t j = 125 c t sink = 90 c gate drive as specified power dissipation = 170 w ideal diodes 60 % of rated voltage square wave: - 0.5 1.0 1.5 2.0 2.5 3.0 1 10 100 1000 v ge = 15 v 500 s pulse width 25 c 125 c v ce - collector to emitter voltage (v) i c - collector current (a) 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 1 10 100 1000 v ge - gate to emitter voltage (v) i c - collector to emitter current (a) v ge = 20 v 500 s pulse width 125 c 25 c www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94428 4 revision: 04-may-10 GA100TS120UPBF vishay high power products "half-bridge" igbt int-a-pak (ultrafast speed igbt), 100 a fig. 4 - case temperature vs. maximum collector current fig. 5 - typical collecto r to emitter voltage vs. junction temperature fig. 6 - maximum effective transient thermal impedance, junction to case fig. 7 - typical capacitance vs. collector to em itter voltage fig. 8 - typical gate charge vs. gate to emitter voltage 0 40 80 120 160 200 0 20 40 60 80 100 120 140 160 t c - case temperature (c) maximum dc collector current (a) dc 0 30 60 90 120 150 1.5 2.0 2.5 3.0 v ge = 15 v 500 s pulse width t j - junction temperature (c) v ce - collector to emitter voltage (v) i c = 50 a i c = 200 a i c = 100 a 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal response 10 . p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c single pulse (thermal resistance) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 1 10 100 0 v ce - collector to emitter voltage (v) c - capacitance (pf) 7000 14 000 21 000 28 000 35 000 v ge = 0 v, f = 1 mhz c ies = c ge + c gc , c ce shorted c res = c gc c oes = c ce + c gc c ies c oes c res 0 300 600 900 0 4 8 12 16 20 q g - total gate charge (nc) v ge - gate to emitter voltage (v) v cc = 400 v i c = 113 a www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 94428 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-may-10 5 GA100TS120UPBF "half-bridge" igbt int-a-pak (ultrafast speed igbt), 100 a vishay high power products fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature fig. 11 - typical switching losses vs. collector current fig. 12 - reverse bias soa fig. 13 - typical forward voltage drop vs. instantaneous forward current fig. 14 - typical stored charge vs. di f /dt 10 20 30 40 50 r g - gate resistance ( ) total switching losses (mj) 20 25 30 35 40 total switching losses (mj) 0 30 60 90 120 150 1 10 100 t j - junction temperature (c) i c = 200 a i c = 100 a i c = 50 a total switching losses (mj) i c - collector current (a) 0 50 100 150 200 0 10 20 30 40 50 60 i c - collector current (a) 0 100 200 300 0 300 600 900 1200 1500 v ce - collector to emitter voltage (v) safe operating area v ge = 20 v t j = 125 c v ce measured at terminal (peak voltage) 1 100 10 1000 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v f - forward voltage drop (v) i f - instantaneous forward current (a) t j = 125 c t j = 25 c 400 1200 1600 2000 0 4000 8000 12 000 16 000 di f /dt (a/s) q rr (nc) v r = 720 v t j = 125 c t j = 25 c i f = 200 a i f = 100 a i f = 50 a 800 www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94428 6 revision: 04-may-10 GA100TS120UPBF vishay high power products "half-bridge" igbt int-a-pak (ultrafast speed igbt), 100 a fig. 15 - typical reverse recovery time vs. di f /dt fig. 16 - typical recovery current vs. di f /dt fig. 17a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 17b - test waveform s for circuit of fig. 18a, defining e off , t d(off) , t f fig. 17c - test waveform s for circuit of fig. 18a, defining e on , t d(on) , t r fig. 17d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr 400 800 1600 2000 80 160 200 240 di f /dt (a/s) t rr (ns) v r = 720 v t j = 125 c t j = 25 c i f = 200 a i f = 100 a i f = 50 a 120 1200 400 800 1600 2000 0 50 150 250 di f /dt (a/s) i rrm (a) v r = 720 v t j = 125 c t j = 25 c i f = 200 a i f = 100 a i f = 50 a 100 200 1200 l2 l1 v cc l r g2 r g1 r g2 r g1 + v g2 - v g2 + - + - l3 v cc = 60 % of bv ces ls = l1 + l2 + l3 v ge = 15 v t1 i c v ce t1 t2 90 % i c t d(off) t f i c 5 % i c t1 + 5 s vce ic dt 90 % v ge + v ge e off = v ce i c dt 10 % v ce t2 t1 5 % v ce i c i pk v cc 10 % i c v ce t1 t2 d.u.t. voltage and current gate voltage d.u.t. + v g 10 % + v g 90 % i c t r t d(on) e on = v ce i c dt diode reverse recovery energy t x e rec = t4 t3 t4 t3 diode recovery waveforms i c v pk 10 % v cc i rr 10 % i rr v cc t rr q rr = t rr t x id dt v d i c dt i c dt www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 94428 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-may-10 7 GA100TS120UPBF "half-bridge" igbt int-a-pak (ultrafast speed igbt), 100 a vishay high power products fig. 17e - macro waveforms for figure 18as test circuit fig. 18 - clamped inductive load test circuit fig. 19 - pulsed collector current test circuit ordering information table v g gate signal device under test current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. 50 v l v c * 1000 v 6000 f 100 v * driver same type as d.u.t.; v c = 80 % of v ce (max) note: due to the 50 v power supply, pulse width and inductor will increase to obtain rated i d 480 v 4 x i c at 25 c 0 - 480 v r l = = 1 - insulated gate bipolar transistor (igbt) 2 - generation 4, igbt silicon, dbc construction 3 - current rating (100 = 100 a) 4 - circuit configuration (t = half-bridge) 5 - package indicator (int-a-pak) 6 - voltage rating (120 = 1200 v) 7 - speed/type (u = ultrafast) 8 - pbf = lead (pb)-free device code 5 13 24 678 g a 100 t s 120 u pbf www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94428 8 revision: 04-may-10 GA100TS120UPBF vishay high power products "half-bridge" igbt int-a-pak (ultrafast speed igbt), 100 a circuit configuration links to related documents dimensions www.vishay.com/doc?95173 1 2 3 5 4 7 6 www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 95173 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-may-09 1 int-a-pak igbt outline dimensions vishay semiconductors dimensions in millimeters (inches) 17 (0.67) 23 (0.91) 5 (0.20) 23 (0.91) 14.3 (0.56) 3 screws m6 x 10 66 (2.60) 94 (3.70) 35 (1.38) 14.5 (0.57) 1 2 3 2.8 x 0.8 (0.11 x 0.03) 5 4 7 6 37 (1.44) 80 (3.15) ? 6.5 (? 0.25) 30 (1.18) 9 (0.33) 7 (0.28) 28 (1.10) 29 (1.15) www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners. www.datasheet.co.kr datasheet pdf - http://www..net/
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